grinding induced wafers

Grinding induced subsurface cracks in silicon wafers ...

1999-7-1  The depth of grinding induced subsurface cracks has no crystal orientation dependence, since surface grinding of silicon wafers is different from single diamond tool machining. 2. The depth of grinding induced subsurface cracks has crystal orientation dependence, but the difference signal is too small for the cross-sectional microscopy method to pick up.

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Grinding induced subsurface cracks in silicon wafers

2006-5-21  Surface grinding of silicon wafers Fig. 2 illustrates the surface grinding process. Grinding wheels are resin-bond diamond cup wheels. The workpiece (wafer) is held by the porous ceramic chuck using vacuum. The axis of rotation for the grinding wheel is offset a distance of the wheel radius relative to the axis of rotation for the wafer.

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Grinding induced subsurface cracks in silicon wafers ...

Various processes are needed to transfer a silicon crystal ingot into wafers. To ensure high surface quality, the damage layer generated by each of the machining processes (such as lapping and grinding) has to be removed by its subsequent processes. Therefore it is essential to assess the subsurface damage for each machining process.

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Impact of back-grinding-induced damage on Si wafer ...

Ultrathin wafers, which enable the low-aspect-ratio through-silicon vias to be formed easily, are indispensable for bumpless three-dimensional (3D) stacking. To clarify thinning-induced damage in detail, atomic-level defects occurring during wafer thinning and due to mechanical stress at microregions of the fracture surface have been studied.

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Impact of back-grinding-induced damage on Si wafer ...

Three different types of back grinding treatment were applied to a 300mm blanket wafer. The final thicknesses of samples are more than 100µm for easy handling. The thinning conditions are the same as those for thinning at less than 10µm. A grit size of #320 was used for coarse grinding, and a grit size of #2000 for fine grinding. Chemical mechanical

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Formation of subsurface cracks in silicon wafers by

2018-9-1  In practice, grinding is the most widely used process for machining of silicon wafers. Pei et al. studied grinding-induced SSCs in silicon wafers and found their configurations to be complex, i.e., to exhibit “umbrella”, “chevron”, and “median crack” configurations 6. The distribution of SSCs has appeared to be stochastic and directionless.

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Surface Grinding in Silicon Wafer Manufacturing

2003-6-5  sawn wafers and etched wafers will be presented respectively. Then there will be a section on subsurface damage induced by surface grinding - an issue critical to both applications. Finally conclusions will be drawn. 2. EXPERIMENTAL CONDITIONS Fig. 3

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Nanoscale Wear Layers on Silicon Wafers Induced by ...

2017-9-2  Grinding is one of the most important methods in manufacturing Si wafers and in thinning the device wafers [6,7,8,9,10]. It has both advantages of high accuracy and efficiency to remove the wear layers left on Si wafers by wire sawing from an ingot. The wear layer is the defect on a single crystal, which is induced by grinding.

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Grinding wheels for manufacturing of silicon wafers: A ...

2006-10-11  were observed in ground silicon wafers [12]. The grinding-induced SSD must be removed by subsequent processes (such as etching and polishing). Deeper SSD will require a thicker layer of silicon to be removed from the ground surfaces, resulting in higher manufacturing costs. There-fore, it is highly desirable that grinding wheels generate

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Warping of silicon wafers subjected to back-grinding ...

2015-4-1  The wafer is induced with stresses by grinding which are partially released when the wafer is removed from the chuck. Residual stresses are thus left in the ground wafer. In this study, FEA is used to analyze the mechanics between the vacuum chuck and wafer during the back-thinning process.

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Impact of back-grinding-induced damage on Si wafer ...

Ultrathin wafers, which enable the low-aspect-ratio through-silicon vias to be formed easily, are indispensable for bumpless three-dimensional (3D) stacking. To clarify thinning-induced damage in detail, atomic-level defects occurring during wafer thinning and due to mechanical stress at microregions of the fracture surface have been studied. Such damage was evaluated by µ-Raman spectroscopy ...

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Impact of back-grinding-induced damage on Si wafer ...

Impact of back-grinding-induced damage on Si wafer thinning for three-dimensional integration Yoriko Mizushima1,2*, Youngsuk Kim2,3, Tomoji Nakamura1, Ryuichi Sugie4, Hideki Hashimoto4, Akira Uedono5, and Takayuki Ohba2 1Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan 2Tokyo Institute of Technology, Yokohama 226-8503, Japan 3Disco Corporation, Ota, Tokyo 143-8580, Japan

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Surface Grinding in Silicon Wafer Manufacturing

2003-6-5  sawn wafers and etched wafers will be presented respectively. Then there will be a section on subsurface damage induced by surface grinding - an issue critical to both applications. Finally conclusions will be drawn. 2. EXPERIMENTAL CONDITIONS Fig. 3 illustrates the surface grinding

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Effect of Grinding-Induced Stress on Interface State ...

Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (Dit) of SiC/SiO2 was investigated. Furthermore, the absorption of peak frequencies was also observed by fourier transform infrared spectroscopy attenuated total ...

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Laser recovery of grinding-induced subsurface

The edges and notches of silicon wafers are usually machined by diamond grinding, and the grinding-induced subsurface damage causes wafer breakage and particle contamination problems. However, the edge and notch surfaces have large curvature and sharp corners, thus it is difficult to be finished by chemo-mechanical polishing. In this study, a nanosecond pulsed Nd:YAG laser was used to ...

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Grinding wheels for manufacturing of silicon wafers: A ...

2006-10-11  were observed in ground silicon wafers [12]. The grinding-induced SSD must be removed by subsequent processes (such as etching and polishing). Deeper SSD will require a thicker layer of silicon to be removed from the ground surfaces, resulting in higher manufacturing costs. There-fore, it is highly desirable that grinding wheels generate

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Process induced sub-surface damage in mechanically

2008-5-28  Therefore, understanding and minimizing the process induced damage during mechanical grinding is a key factor for the fabrication of ultra-thin wafers. The damage caused by grinding is typically investigated by searching for the possible presence of sub-surface cracks, the measurement of wafer warpage, characterization of mechanical strength ...

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Warping of silicon wafers subjected to back-grinding ...

2015-4-1  This study investigates warping of silicon wafers in ultra-precision grinding-based back-thinning process. By analyzing the interactions between the wafer and the vacuum chuck, together with the machining stress distributions in damage layer of ground wafer, the study establishes a mathematical model to describe wafer warping during the thinning process using the elasticity theory.

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Fine grinding of silicon wafers - K-State

2006-5-21  International Journal of Machine Tools Manufacture 41 (2001) 659–672 Fine grinding of silicon wafers Z.J. Pei a,*, Alan Strasbaugh b a Department of Industrial and Manufacturing Systems, Kansas State University, Manhattan, KS 66506, USA b Strasbaugh, Inc., 825 Buckley Road, San Luis Obispo, CA 93401, USA Received 17 November 1999; accepted 5 October 2000

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Subsurface Damage Detection on Ground Silicon

2019-9-4  A silicon wafer is important for the electronic and computer industries. However, subsurface damage (SSD), which is detrimental to the performance and lifetime of a silicon chip, is easily induced in a silicon wafer during a grinding process since silicon is typically a hard and brittle material.

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Surface Grinding in Silicon Wafer Manufacturing

2003-6-5  sawn wafers and etched wafers will be presented respectively. Then there will be a section on subsurface damage induced by surface grinding - an issue critical to both applications. Finally conclusions will be drawn. 2. EXPERIMENTAL CONDITIONS Fig. 3 illustrates the surface grinding

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Grinding wheels for manufacturing of silicon wafers: A ...

2006-10-11  were observed in ground silicon wafers [12]. The grinding-induced SSD must be removed by subsequent processes (such as etching and polishing). Deeper SSD will require a thicker layer of silicon to be removed from the ground surfaces, resulting in higher manufacturing costs. There-fore, it is highly desirable that grinding wheels generate

More

Process induced sub-surface damage in mechanically

2008-5-28  Therefore, understanding and minimizing the process induced damage during mechanical grinding is a key factor for the fabrication of ultra-thin wafers. The damage caused by grinding is typically investigated by searching for the possible presence of sub-surface cracks, the measurement of wafer warpage, characterization of mechanical strength ...

More

Effect of Grinding-Induced Stress on Interface State ...

Back-grinding process was applied to the 4H-SiC (0001) epitaxial wafers. We found that the parameters about stress increased after back-grinding process. In our work, the characterization of stress on interface state density (Dit) of SiC/SiO2 was investigated. Furthermore, the absorption of peak frequencies was also observed by fourier transform infrared spectroscopy attenuated total ...

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Nanogrinding of SiC wafers with high flatness and low ...

2013-1-5  and 4.071 nm respectively when grinding with the #12000 diamond wheel. 3.2 Surface morphology Figures 4(a)−(d) are the SEM images of the double side lapped and ground SiC wafers. SEM observation shows that the lapped wafer surface consists of a great number of small fracture craters induced by lateral cracks propagation.

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Fine grinding of silicon wafers - K-State

2006-5-21  International Journal of Machine Tools Manufacture 41 (2001) 659–672 Fine grinding of silicon wafers Z.J. Pei a,*, Alan Strasbaugh b a Department of Industrial and Manufacturing Systems, Kansas State University, Manhattan, KS 66506, USA b Strasbaugh, Inc., 825 Buckley Road, San Luis Obispo, CA 93401, USA Received 17 November 1999; accepted 5 October 2000

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Grinding of silicon wafers: A review from historical ...

2008-8-9  Grinding of silicon wafers: A review from historical perspectives Z.J. Peia,, Graham R. Fisherb, J. Liua,c a Department of Industrial and Manufacturing Systems Engineering, Kansas State University, Manhattan, KS 66506, USA b MEMC Electronic Materials, Inc., 501 Pearl Drive, St. Peters, MO 63376, USA c Key Research Laboratory for Stone Machining, Huaqiao University, Quanzhou,

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Characterization of Extreme Si Thinning Process for Wafer ...

2018-1-4  multiple wafers with significantly scaled through-Si vias. In order to achieve this type of 3D structure, backside thinning is a key step. Conventional mechanical grinding is known as the best way to remove bulk Si in terms of cost of ownership (CoO). However, mechanical damage such as induced

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Nanoscale solely amorphous layer in silicon wafers

2016-10-13  Nanoscale solely amorphous layer is achieved in silicon (Si) wafers, using a developed diamond wheel with ceria, which is confirmed by high resolution transmission electron

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大连理工大学主页平台管理系统 郭晓光--中文主页--首页 ...

2021-6-22  [31] Li Zhiyuan, Gao Shang, Kang Renke, Li Honggang, Guo Xiaoguang, A comparative study of lapping and grinding induced surface/subsurface damage of silicon wafers and corresponding polishing efficiency, International Journal of Abrasive Technology, 2020

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